Related papers: Probing electron trapping by current collapse in G…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot…
We fabricated a quantum dot coupled laterally to a two-dimensional electron gas and vertically to a three-dimensional electron gas in order to investigate the eigenstate dependence of tunneling rate to these gases. We observed a…
The Coulomb drag phenomenon in a Coulomb-coupled double quantum dot system is revisited with a simple model that highlights the importance of simultaneous tunneling of electrons. Previously, cotunneling effects on the drag current in…
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…
Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn…
The ability to control electronic states at the nanoscale has contributed to our modern understanding of condensed matter. In particular, quantum dot circuits represent model systems for the study of strong electronic correlations,…
We study an interacting single-level quantum dot weakly coupled to three electrodes. When two electrodes are biased by voltages with opposite polarities, while keeping the third lead (the stem) grounded, the current through the stem is a…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
A new field electron emission (FE) mechanism, which includes Coulomb blockade and quantum confinement effects, is revealed for heterostructured emitters composed of quantum dots and nanowires self-assembled at diamond nanotips. The total…
We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two…
We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed…
In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled…