Related papers: Native defects and $p$-type dopability in transpar…
The electronic, thermal and optical properties of a monolayer BeO with Boron (B) and Nitrogen (N) co-dopant atoms are studied by means of a density functional theory computation. Our calculations reveal that BeO with BN-codopant atoms can…
Introducing an isolated intermediate band (IB) into a wide band gap semiconductor can potentially improve the optical absorption of the material beyond the Shockley-Queisser limitation for solar cells. Here, we present a systematic study of…
We have investigated the $T_c$ variation with the hole concentration $p$ in the La-doped Bi 2201 system, Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$. It is found that the Bi 2201 system does not follow the systematics in $T_c$ and $p$ observed…
We synthesized the pure and co-doped titanium dioxide (TiO$_2$) electrodes via spin coating. We examined the optical and electronic properties of as-prepared thin film electrodes with co-doping of transition metals and non-metals. The…
The $s,p-d$ exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The $+U$ corrections are included to reproduce the…
Based on genetic evolution algorithm, universal structure predictor USPEX assists to explore the most stable structure from Na+ substituting Ca2+ under variable concentration, for p type transparent conductive oxide application. The study…
We use the Local Density Approximation in combination with the Dynamical Mean Field Theory to carry out a comparative investigation of a typical electron doped and a typical hole doped copper oxide, NCCO and LSCO respectively. The parent…
We perform hybrid-density functional calculations to investigate the charged defect formation energy of native point defects in $Mg_2 Si$, $Mg_2 Sn$, and their solid solutions. The band gap correction by hybrid-density functional is found…
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…
p-type doping from the dielectric/semiconductor interface of a SnO2 thin film transistor (TFT) has been utilized to develop high carrier mobility balanced ambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate…
The doping dependence of the themopower, in-plane resistivity rho_ab(T), out-of-plane resistivity rho_c(T), and susceptibility has been systematically measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+delta. We found that the…
Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…
The in-plane London penetration depth, $\Delta\lambda(T)$, was measured using a tunnel diode resonator in single crystals of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ for five doping levels $x$ ranging from underdoped, $T_c$=11 K ($x$=0.17), to optimally…
Bi$_2$Se$_3$ is a topological insulator and it is often doped with Te to compensate the $n$-type carriers due to Se vacancies. Different doping patterns of Te would influence the transport characteristics of the surface states. We study the…
We present low-temperature thermal conductivity measurements on the cuprate Tl_2Ba_2CuO_{6+delta} throughout the overdoped regime. In the T -> 0 limit, the thermal conductivity due to d-wave nodal quasiparticles provides a bulk measurement…
The interplay between the quasi 1-dimensional CuO-chains and the 2-dimensional CuO2 planes of YBa2Cu3O6+x (YBCO) has been in focus for a long time. Although the CuO-chains are known to be important as charge reservoirs that enable…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
Mono- and few-layer transition-metal dichalcogenides (TMDCs) provide opportunities for ideal two-dimensional semiconductors for electronic and optoelectronic devices. For electronic devices on TMDCs, it is essential to incorporate n- and/or…
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…
The electron hole concentration p in the CuO2 planes of YBa2Cu3O6+x (YBCO) has been evaluated using the unit cell length in the c-direction together with a simple estimation for p in the chain oxygen ordered phases. The empirical…