Related papers: Strain engineering in Ge/GeSi spin qubits heterost…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field…
Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Land\'e $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value…
For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in…
The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the…
We employ multiparticle factorization to constrain deformations of tree-level open string amplitudes. Assuming minimal degeneracy among intermediate states of the same spin up through the second excited level, we find that the Regge…
A five-level {\Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic…
Very recently, twisted graphene bilayer (TGB) around the first magic angle 1.1{\deg} has attracted much attention for the realization of exotic quantum states, such as correlated insulator behavior and unconventional superconductivity. Here…
We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a…
Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral…
We study coherent dynamics in a system of dipolar coupled spin qubits diluted in solid and subjected to a driving microwave field. In the case of rare earth ions, anisotropic crystal background results in anisotropic g tensor and thus…
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid…
We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized…
One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
SiGe heterostructures integrated with Si via virtual substrate (VS) growth are promising hosts for spin qubits. While VS growth targets plastic relaxation, residual cross-hatch strain inhomogeneity propagates into heterostructure…