Related papers: Strain engineering in Ge/GeSi spin qubits heterost…
In superconductor-semiconductor hybrid structures, superconductivity and spin polarization are competing effects because magnetic fields break Cooper pairs. They can be combined using thin films and in-plane magnetic fields, an approach…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…
The electron Land\'e g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via…
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade…
We provide a systematic quantitative description of spin polarization in armchair and zigzag graphene nanoribbons in a perpendicular magnetic field. We first address spinless electrons within the Hartree approximation studying the evolution…
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…
We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a…
Hole semiconductor nanowires (NW) are promising platforms to host spin qubits and Majorana bound states for topological qubits because of their strong spin-orbit interactions (SOI). The properties of these systems depend strongly on the…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five…
We present theoretical calculations of the Land\'e g-factors of semiconductor nanostructures using a time-dependent empirical tight-binding method. The eigenenergies and eigenfunctions of the band edge states are calculated as a function of…
Planar germanium heterostructures are promising hosts for hybrid quantum devices due to their compatibility with superconductors, low material disorder, and relaxed fabrication constraints. Also, the potentially low density of nuclear spins…
Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In…
Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy…
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential,…
Long coherence time and compatibility with semiconductor fabrication make spin qubits in silicon an attractive platform for quantum computing. In recent years, hole spin qubits are being developed as they have the advantages of weak…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…
In the presence of spin-orbit coupling, quantum models for semiconductor materials are generally not exactly solvable. As a result, understanding of the strong spin-orbit coupling effects in these systems remains poor. Here we develop an…
We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this…