Related papers: Anomalous valley Hall effect in electric-potential…
We carried out a comprehensive study of electronic transport, thermal and thermodynamic properties in FeCr$_2$Te$_4$ single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant…
Inspired by the successful synthesis of two-dimensional (2D) V-based Janus dichloride monolayers with intrinsic ferromagnetism and high Curie temperature (T$_{c}$), the electronic structure, spin-valley splitting and magnetic anisotropy of…
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here…
The quantum anomalous Hall state with a large band gap and a high Chern number is significant for practical applications in spintronics. By performing first-principles calculations, we investigate electronic properties of the fully…
Quantum anomalous Hall (QAH) effect provides dissipationless chiral channels for spin transport, expected as an outstanding candidate in future low-power quantum computation. The spin-splitting band structure is vital for obtaining QAH…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
The interplay between quantum geometry and magnetic order offers a novel strategy for designing next-generation nanodevices. Here, we demonstrate that interlayer magnetic coupling in two-dimensional (2D) CoPSe3 bilayers enables precise…
The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is…
Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in future electronic devices, but also because of the rich…
The generation and control of spin- and valley-polarization in antiferromagnets (AFMs) have garnered increasing attention due to their potential for enabling faster and more stable multifunctional spintronic and valleytronic memory and…
The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…
Due to the time reversal symmetry, the linear anomalous Hall effect (AHE) usually vanishes in MoS2 monolayer. In contrast, the nonlinear AHE plays an essential role in such system when the uniaxial strain breaks the C3v symmetry and…
The L1_2-phase non-collinear antiferromagnet (AFM) Mn_3Ir has emerged as a pioneering platform for realizing the zero-field anomalous Hall effect (AHE), thereby catalyzing rapid advances in antiferromagnetic spintronics. Despite its…
The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE). Here we show a new Hall effect…
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous…
Under broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field,…
The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…