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Transmission through photoexcited semiconductors is used to temporally and spectrally shape a Terahertz pulse. By adjusting the optical pump-THz probe delay, we experimentally introduce a polar asymmetry in the pulse profile as high as 92%.…
It is recent that the emergence of topological insulators in condensed matter physics has inspired analogous wave phenomena in mechanical systems, mostly in the setting of discrete lattice models. Here we report a numerical and experimental…
The charge dynamics in weakly hole doped high temperature superconductors is studied in terms of the accurate numerical solution to a model of a single hole interacting with a quantum lattice in an antiferromagnetic background, and accurate…
We introduce a solid-state qubit in which exchange interactions among confined electrons provide both the static longitudinal field and the oscillatory transverse field, allowing rapid and full qubit control via rf gate-voltage pulses. We…
Elemental tellurium is a strongly spin-orbit coupled Peierls-distorted semiconductor whose band structure features topologically protected Weyl nodes. Using time-dependent density functional theory calculations, we show that impulsive…
Colloidal semiconductor quantum dots are robust emitters implemented in numerous prototype and commercial optoelectronic devices. However, active fluorescence color tuning, achieved so far by electric-field induced Stark effect, has been…
Theory of the Linear photogalvanic effect is developed for direct optical transitions between surface states of three-dimensional topological insulators. The photocurrent governed by the orientation of the polarization plane of light and…
Waveguide quantum electrodynamics (QED) has opened a new frontier in quantum optics, which enables the radiative coupling of distantly located emitters via the spatially extended waveguide mode. This coupling leads to modified emission…
Recent studies have shown that non-equilibrium optical systems under static electric fields offer a pathway to realize chiral gain, where the non-Hermitian response of a material is controlled by the spin angular momentum of the wave. In…
We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of…
We examine the impact of time-dependent gate voltages on entanglement generation in two capacitively coupled charge qubits, with single-electron injection triggered on demand. The gate voltage modulates the tunnel coupling between the…
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre…
We study inhibition of absorption, transparency, energy and momentum transport of the inhomogeneous component of harmonic pulses in dielectrics and semiconductors, at visible and UV wavelengths, focusing on materials like GaP. In these…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
We report here a general theory describing photoelectron transportation dynamics in GaAs semiconductor photocathodes. Gradient doping is incorporated in the model through the inclusion of directional carrier drift. The time-evolution of…
We construct a metamaterial from radio-frequency harmonic oscillators, and find two topologically distinct phases resulting from dissipation engineered into the system. These phases are distinguished by a quantized value of bulk energy…
We investigate photoluminescence from a high-density electron-hole plasma in semiconductor quantum wells created via intense femtosecond excitation in a strong perpendicular magnetic field, a fully-quantized and tunable system. At a…
A metallic ring based, diode-integrated, low-profile, power-dependent, reflective metasurface working from 3 GHz to 3.6 GHz is proposed in this letter. Unlike the previous study which shifts a band up and down to change the impedance of the…
We develop a practical approach to electrically tuning the nonlinear photoresponse of two-dimensional semiconductors by explicitly incorporating a static out-of-plane electric field into the electronic ground state prior to optical…
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…