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We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an…
The results of the investigation of changes of parameters of dynamic bipolar charge-voltage and bipolar and unipolar dynamic current-voltage characteristics and transient currents connected with the pulse change of humidity for the samples…
In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…
Engineering quantum phases using light is a novel route to designing functional materials, where light-induced superconductivity is a successful example. Although this phenomenon has been realized experimentally, especially for the…
On the basis of a tight-binding model for a strongly disordered semiconductor with correlated conduction- and valence band disorder a new coherent dynamical intra-band effect is analyzed. For systems that are excited by two, specially…
We employ a silicon dielectric waveguide to confine and concentrate terahertz pulses, and observe that the absorption saturates under strong terahertz fields. By comparing the response between lightly-doped and intrinsic silicon waveguides,…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…
Shift current transient are obtained for near band gap excitation of bulk GaAs by numerical solutions of the semiconductor Bloch equations in a basis obtained from a 14 band k.p model of the band structure. This approach provides a…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We study the orbital and spin dynamics of charge carriers induced by non-overlapping linearly polarized light pulses in semiconductor quantum wells (QWs). It is shown that such an optical excitation with coherent pulses leads to a spin…
We propose a new mode of operation of an electron pump consisting of two weakly coupled quantum dots connected to reservoirs. An electron can be transferred within the device at zero bias voltage when it is subjected to electromagnetic…
We propose a mechanism for light-induced unconventional superconductivity in a two-valley semiconductor with a massive Dirac type band structure. The superconducting phase results from the out-of-equilibrium excitation of carriers in the…
We study the local states within the polariton bandgap that arise due to deep defect centers with strong electron-phonon coupling. Electron transitions involving deep levels may result in alteration of local elastic constants. In this case,…
Most functionalities of modern electronic circuits rely on the possibility to modify the path fol- lowed by the electrons using, e.g. field effect transistors. Here we discuss the interplay between the modification of this path and the…
The quantum Hall effect is generally understood for free electron gases, in which topologically protected edge states between Landau levels (LLs) form conducting channels at the edge of the sample. In periodic crystals, the LLs are…
We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality…
The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole…