Related papers: Buffer-less Gallium Nitride High Electron Mobility…
Superconductivity at the interface of a heterostructure confined to nanometer-sized scale offers unique opportunities to study the exotic physics of two-dimensional superconductivity. The realization of superconductivity at the interface…
We examined the effect of backside insulation on the dynamic on-resistance of lateral p-GaN HEMTs. To gain a comprehensive understanding of the dynamic onresistance difference between substrate grounded and substrate floating p-GaN HEMTs,…
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…
We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal…
Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…
Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron…
This paper presents a design and implementation of a high-power Gallium Nitride (GaN)-based multilevel Hbridge inverter to excite wireless charging coils for the wireless power transfer of electric vehicles (EVs). Compared to the…
Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D…
Superconductivity has been one of the focal points in medium and high-entropy alloys (MEAs-HEAs) since the first discovery of the HEA superconductor in 2014. Until now, most HEAs' superconducting transition temperature (Tc) has not exceeded…
Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…
Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gate leakage and reduced ON/OFF ratio are unsuitable for the…
Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades,…
CrN/MgO(111) multilayers modeled via \textit{ab initio} calculations give rise to nanoscale, scalable, spatially separated two-dimensional electron and hole gases (2DEG+2DHG), each confined to its own CrN interface. Due to the Cr $3d^3$…
Transition metal aluminum nitrides are a technologically important class of multifunctional ceramics, however, the HfAlN system remains largely unexplored. We investigate phase stability, nanostructure design, and mechanical behavior of…
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging.…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
$\mathrm{\beta}$-Gallium oxide ($\mathrm{\beta\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron…