Related papers: Electronically-driven switching of topology in LaS…
State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1,…
We investigated the electronic properties of the topological insulator Bi$_{2}$Te$_{3}$ by scanning tunneling microscopy and spectroscopy at low temperature. We obtained high-resolution quasiparticle interference data of the topological…
In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic…
We study with first-principles methods the interplay between bulk and surface Dirac fermions in three dimensional Dirac semimetals. By combining density functional theory with the coherent potential approximation, we reveal a topological…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
Narrow gap semiconductor Pb$_{1-x}$Sn$_{x}$Se was investigated for topologically protected surface states in its rock-salt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped…
We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such…
In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level…
The bulk-edge correspondence principle, a cornerstone of topological physics, ensures that first-order topological systems host robust chiral edge states in two dimension. This was later extended to higher-order phases, where second-order…
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic…
TaSb$_2$, a member of the transition metal dipnictide family of materials, hosts the very rare dual topological phase - weak topological insulating state and topological crystalline insulating state along different crystallographic…
Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS),…
Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…
Magnetic topological materials, in which the time-reversal symmetry is broken, host various exotic quantum phenomena, including the quantum anomalous Hall effect, axion insulator states, and Majorana fermions. The study of magnetic…
We study the low-energy electronic structure of three-dimensional Dirac semimetal, Cd$_3$(As$_{1-x}$P$_x$)$_2$ [$x$ = 0 and 0.34(3)], by employing the angle-resolved photoemission spectroscopy (ARPES). We observe that the bulk Dirac states…
We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES)…
Nontrivial topology in type-II Dirac semimetal NiTe$_2$ leading to topologically protected surface states give rise to fascinating phenomena holding great promise for next-generation electronic and spintronic devices. Key parameters $-$…
Topological phase transition is accompanied with a change of topological numbers. It has been believed that the gap closing and the breakdown of the adiabaticity at the transition point is necessary in general. However, the gap closing is…
Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to…