State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, Ge(BixSb1−x)2Te4, for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). Our results show that the Dirac point shifts linearly with 'x', crossing the Fermi energy near x = 0.7. This novel observation of a smoothly tunable, isolated Dirac point crossing through the topological transport regime and having strong linear dependence with substitution can be critical for future topological spintronics applications.
@article{arxiv.2101.05166,
title = {Observation of a Smoothly Tunable Dirac Point in $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$},
author = {Sean Howard and Arjun Raghavan and Davide Iaia and Caizhi Xu and David Flötotto and Man-Hong Wong and Sung-Kwan Mo and Bahadur Singh and Raman Sankar and Hsin Lin and Tai-Chang Chiang and Vidya Madhavan},
journal= {arXiv preprint arXiv:2101.05166},
year = {2024}
}