English

Unoccupied topological surface state in Bi$_{2}$Te$_{2}$Se

Mesoscale and Nanoscale Physics 2015-06-15 v1

Abstract

Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi2_2Te2_2Se. A strong warping of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied range far beyond the Dirac point, where it coexists with the bulk conduction band. This finding sheds light on the spin and charge dynamics over the wide energy range and opens a way to designing opto-spintronic devices.

Keywords

Cite

@article{arxiv.1305.2134,
  title  = {Unoccupied topological surface state in Bi$_{2}$Te$_{2}$Se},
  author = {Munisa Nurmamat and E. E. Krasovskii and K. Kuroda and M. Ye and K. Miyamoto and M. Nakatake and T. Okuda and H. Namatame and H. Namatame and M. Taniguchi and E. V. Chulkov and K. A. Kokh and O. E. Tereshchenko and A. Kimura},
  journal= {arXiv preprint arXiv:1305.2134},
  year   = {2015}
}

Comments

5 pages, 4 figures

R2 v1 2026-06-22T00:14:07.043Z