English

Topological electronic structure in the antiferromagnet HoSbTe

Materials Science 2020-10-08 v1 Computational Physics

Abstract

Magnetic topological materials, in which the time-reversal symmetry is broken, host various exotic quantum phenomena, including the quantum anomalous Hall effect, axion insulator states, and Majorana fermions. The study of magnetic topological materials is at the forefront of condensed matter physics. Recently, a variety of magnetic topological materials have been reported, such as Mn3_3Sn, Co3_3Sn2_2S2_2, Fe3_3Sn2_2, and MnBi2_2Te4_4. Here, we report the observation of a topological electronic structure in an antiferromagnet, HoSbTe, a member of the ZrSiS family of materials, by angle-resolved photoemission spectroscopy measurements and first-principles calculations. We demonstrate that HoSbTe is a Dirac nodal line semimetal when spin-orbit coupling (SOC) is neglected. However, our theoretical calculations show that the strong SOC in HoSbTe fully gaps out the nodal lines and drives the system to a weak topological insulator state, with each layer being a two-dimensional topological insulator. Because of the strong SOC in HoSbTe, the gap is as large as hundreds of meV along specific directions, which is directly observed by our ARPES measurements. The existence of magnetic order and topological properties in HoSbTe makes it a promising material for realization of exotic quantum devices.

Keywords

Cite

@article{arxiv.2010.03528,
  title  = {Topological electronic structure in the antiferromagnet HoSbTe},
  author = {Shaosheng Yue and Yuting Qian and Meng Yang and Daiyu Geng and Changjiang Yi and Shiv Kumar and Kenya Shimada and Peng Cheng and Lan Chen and Zhijun Wang and Hongming Weng and Youguo Shi and Kehui Wu and Baojie Feng},
  journal= {arXiv preprint arXiv:2010.03528},
  year   = {2020}
}

Comments

5 pages, 3 figures

R2 v1 2026-06-23T19:08:24.691Z