Related papers: Spin relaxation of localized electrons in monolaye…
We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS$_2$. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond-timescale Larmor spin…
Non-equilibrium dynamics of strongly correlated systems constitutes a fascinating problem of condensed matter physics with many open questions. Here we investigate the relaxation dynamics of Landau-quantized electron system into spin-valley…
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the…
The valley degree of freedom and the possibility of spin-valley coupling of solid materials have attracted growing interest, and the relaxation dynamics of spin- and valley-polarized states has become an important focus of recent studies.…
Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar…
The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of…
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…
We derive approximate expressions for the static local field factors of a spin polarized two-dimensional electron gas which smoothly interpolate between their small- and large-wavevector asymptotic limits. For the unpolarized electron gas,…
Optical orientation of localized/bound excitons is shown to be effectively enhanced by the application of magnetic fields as low as 20 mT in monolayer WS$_2$. At low temperatures, the evolution of the polarization degree of different…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
The effect of weak localization on spin relaxation in a two-dimensional system with a spin-split spectrum is considered. It is shown that the spin relaxation slows down due to the interference of electron waves moving along closed paths in…
We suggest a new spin orientation mechanism for localized electrons: $dynamic~electron~spin~polarization~provided~by~nuclear~spin~fluctuations$. The angular momentum for the electrons is gained from the nuclear spin system via the hyperfine…
We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully…
We investigate the influence of an external magnetic field on spin phase relaxation of single electrons in semiconductor quantum dots induced by the hyperfine interaction. The basic decay mechanism is attributed to the dispersion of local…
Transition metal dichalcogenide monolayers are highly interesting for potential valleytronic applications due to the coupling of spin and valley degrees of freedom and valley-selective excitonic transitions. However, ultrafast recombination…
Energy dissipation via spin excitations is investigated for a hard ferromagnetic tip scanning a soft magnetic monolayer. We use the classical Heisenberg model with Landau-Lifshitz-Gilbert (LLG)-dynamics including a stochastic field…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS$_2$. From the analysis we obtain information regarding the phase-coherence and the spin diffusion of the electrons. We find that the…