We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase-coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase-coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to non-encapsulated MoS2. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.
@article{arxiv.1903.01536,
title = {Weak localization in boron nitride encapsulated bilayer MoS$_2$},
author = {Nikos Papadopoulos and Kenji Watanabe and Takashi Taniguchi and Herre S. J. van der Zant and Gary A. Steele},
journal= {arXiv preprint arXiv:1903.01536},
year = {2019}
}