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Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…

The value memristor devices offer to the neuromorphic computing hardware design community rests on the ability to provide effective device models that can enable large scale integrated computing architecture application simulations.…

Mesoscale and Nanoscale Physics · Physics 2016-11-18 Nathan R. McDonald , Robinson E. Pino , Peter J. Rozwood , Bryant T. Wysocki

The great potential of memristive devices for real-world applications still relies on overcoming key technical challenges, including the need for a larger number of stable resistance states, faster switching speeds, lower SET/RESET…

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that…

Mesoscale and Nanoscale Physics · Physics 2016-02-24 X. Zhong , I. Rungger , P. Zapol , H. Nakamura , Y. Asai , O. Heinonen

We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior…

Mesoscale and Nanoscale Physics · Physics 2013-06-25 I. Batko , M. Batkova

Together with the Kirchhoff-Institute for Physics(KIP) the Fraunhofer IZM has developed a full wafer redistribution and embedding technology as base for a large-scale neuromorphic hardware system. The paper will give an overview of the…

Emerging Technologies · Computer Science 2018-01-16 Kai Zoschke , Maurice Güttler , Lars Böttcher , Andreas Grübl , Dan Husmann , Johannes Schemmel , Karlheinz Meier , Oswin Ehrmann

Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…

Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these…

Applied Physics · Physics 2024-05-31 C. Pashartis , M. J. van Setten , M. Houssa , G. Pourtois

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging…

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…

The thesis investigates the utilization of memristive and memcapacitive crossbar arrays in low-power machine learning accelerators, offering a comprehensive co-design framework for deep neural networks (DNN). The model, implemented through…

Neural and Evolutionary Computing · Computer Science 2024-03-06 Ankur Singh

Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in…

Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multiple-conductance states, scalability, low off-current, and…

Materials Science · Physics 2023-04-12 Florian Maudet , Veeresh Deshpande , Catherine Dubourdieu

Non-volatile memory arrays can deploy pre-trained neural network models for edge inference. However, these systems are affected by device-level noise and retention issues. Here, we examine damage caused by these effects, introduce a…

This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…

Materials Science · Physics 2020-06-22 Susmita Chowdhury , Rachana Gupta , Shashi Prakash , Layanta Behera , D. M. Phase , Mukul Gupta

Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…

Applied Physics · Physics 2025-08-25 Yuriy V. Pershin , Liya Patel , Bapi Berra , Doug Aaron , Stephen A. Sarles

Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…

Materials Science · Physics 2022-07-05 Yogesh Kumar , Prince Sharma , V. P. S. Awana

Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…

Disordered Systems and Neural Networks · Physics 2018-04-19 Taimur Ahmed , Sumeet Walia , Edwin Mayes , Rajesh Ramanathan , Vipul Bansal , Madhu Bhaskaran , Sharath Sriram , Omid Kavehei

We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…

Materials Science · Physics 2015-06-22 Farnood Merrikh-Bayat , Brian Hoskins , Dmitri B. Strukov

Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…

Applied Physics · Physics 2024-11-08 Shengbo Wang , Jingfang Pei , Cong Li , Xuemeng Li , Li Tao , Arokia Nathan , Guohua Hu , Shuo Gao