Related papers: Tunneling valley Hall effect induced by coherent g…
The intrinsic anomalous Hall effect is one of the most exciting manifestations of the geometric properties of the electronic wave-function. Here, we predict that the electronic wave-function's geometric nature also gives rise to a purely…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Quantum materials have exhibited attractive electro-mechanical responses, but their piezoelectric coefficients are far from satisfactory due to the lack of fundamental mechanisms to benefit from the quantum effects. We discovered the valley…
Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can…
Topologically protected zero-line modes appear at the interface between two regions of the monolayer graphene in quantum anomalous Hall phase with different Chern number. In the presence of staggered sublattice potential, the band gaps of…
The Hall effect that occurs when current flows through a CoFeB/MgO/Pt tunnel junction is investigated. It is shown that the transverse voltage in Pt electrode is nonlinear on a DC voltage applied to the tunnel junction. It has both linear…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We study point-contact tunneling in the integer quantum Hall state of bosons. This symmetry-protected topological state has electrical Hall conductivity equal to $2 e^2/h$ and vanishing thermal Hall conductivity. In contrast to the integer…
2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…
We describe transport properties of two-dimensional arrays of low capacitance tunnel junctions, such as the current voltage characteristic and its dependence on external magnetic field and temperature. We discuss several experiments in…
While the exponential decay of tunneling probability with barrier thickness is well known, the accompanying oscillations with thickness have been comparatively less explored. Using a tight binding model, we investigate an AB-stacked bilayer…
Valley-related multiple Hall effect in 2D lattice is a fundamental transport phenomenon in the fields of condensed-matter physics and material science. So far, most proposals for its realization are limited to toy models or extrinsic…
Flat bands emerging in buckled monolayer graphene superlattices have been recently shown to realize correlated states analogous to those observed in twisted graphene multilayers. Here, we demonstrate the emergence of valley topology driven…
We show that strained or deformed honeycomb lattices are promising platforms to realize fractional topological quantum states in the absence of any magnetic field. The strained induced pseudo magnetic fields are oppositely oriented in the…
We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the…
Parallel-field Hall effect is the appearance of a Hall voltage $V_{\rm H}$ that is transverse to the current $I$ when the magnetic field $B$ is applied parallel to $I$ (i.e. $B \parallel I \perp V_{\rm H}$). Such an effect is symmetry…
The observation of a Hall effect, a finite transverse voltage induced by a longitudinal current, usually requires the breaking of time-reversal symmetry, for example through the application of an external magnetic field or the presence of…
In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…
Since effectively the local contact vortex velocity dependent part of the Magnus force in a Josephson junction array is zero in the classical limit, we predict zero classical Hall effect. In the quantum limit because of the geometric phases…
In this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe$_2$ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign…