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Parallel-Field Hall effect in ZrTe$_5$

Materials Science 2025-08-21 v1 Mesoscale and Nanoscale Physics Strongly Correlated Electrons

Abstract

Parallel-field Hall effect is the appearance of a Hall voltage VHV_{\rm H} that is transverse to the current II when the magnetic field BB is applied parallel to II (i.e. BIVHB \parallel I \perp V_{\rm H}). Such an effect is symmetry forbidden in most cases and hence is very unusual. Interestingly, the existence of a finite parallel-field Hall effect was reported for the layered topological semimetal ZrTe5_5 and was proposed to be due to Berry curvature. However, it is forbidden for the known symmetry of ZrTe5_5 and the possible existence of a misaligned out-of-plane magnetic field was not completely ruled out. Here, we elucidate the existence of the parallel-field Hall effect in ZrTe5_5 with careful magnetic-field alignment. We interpret this result to originate from symmetry breaking and quantitatively explain the observed parallel-field Hall signal by considering a tilting of the Fermi surface allowed by broken symmetry.

Keywords

Cite

@article{arxiv.2408.11113,
  title  = {Parallel-Field Hall effect in ZrTe$_5$},
  author = {Yongjian Wang and Thomas Boemerich and A. A. Taskin and Achim Rosch and Yoichi Ando},
  journal= {arXiv preprint arXiv:2408.11113},
  year   = {2025}
}

Comments

9 pages total; 6 pages of main text with 3 figures, 3 pages of supplement with 2 figures. The raw data are available at the online depository Zenodo with the identifier 10.5281/zenodo.13350894

R2 v1 2026-06-28T18:18:36.672Z