Related papers: Enhancing and Mapping Thermal Boundary Conductance…
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary…
Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium…
Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…
Heat transfer is a critical aspect of modern electronics, and a deeper understanding of the underlying physics is essential for building faster, smaller, and more powerful devices with an improved performance and efficiency. In such…
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to…
Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…
We introduce a superconducting transconductance amplifier based on the thermal modulation of a SINIS (Superconductor-Insulator-Normal metal-Insulator-Superconductor) configuration. The device is composed of a normal metal island interfaced…
Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the…
We report a series of high-pressure electrical transport, magnetic susceptibility, and x-ray diffraction measurements on single crystals of the weak topological insulator Bi2TeI and the topological metal Bi3TeI. Room temperature x-ray…
We study a 4-orbital tight-binding (TB) model for ZrSiS from the square sublattice generated by the Si atoms. After studying three other alternatives, we endow such model with a new effective spin-orbit coupling (SOC) consistent with {\em…
Alloying indium into the topological insulator Sn1-xInxBi2Te4 induces bulk superconductivity with critical temperatures Tc up to 1.85 K and upper critical fields up to about 14 kOe. This is confirmed by electrical resistivity, heat…
Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present…
We report on the superconducting performance of the ex-situ SiC doped MgB2 monofilamentary tapes. Polycrystalline powders of MgB2 doped with 5 and 10 wt% SiC were synthesized by conventional solid-state reaction route and characterized for…
It has been demonstrated that InSb nanoinclusions, which are formed in situ, can simultaneously improve all three individual thermoelectric properties of the n-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al., Acta Mater. 58, 4795…
Recent progress in the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform has resulted in the demonstration of essential building blocks such as low-loss waveguides and microresonators. In this work, we add tunability to the 4H-SiCOI…
We study the low-energy physics of topological insulator (TI) nanoribbons proximity-coupled to s-wave superconductors (SCs) by explicitly incorporating the proximity effects that emerge at the TI-SC interface. We construct a low-energy…
We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even…
Topological insulators (TIs) have the singular distinction of being electronic insulators while harboring metallic, conductive surfaces. In ordinary materials, defects such as cracks and deformations are barriers to electrical conduction,…