Related papers: Enhancing and Mapping Thermal Boundary Conductance…
Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and…
At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an…
In this paper, we propose a joint transceiver beamforming design to simultaneously mitigate self-interference (SI) and partial inter-node interference for full-duplex multiple-input and multiple-output ad-hoc network, and then derive the…
Solid-liquid interfacial thermal conductance (ITC) critically influences heat transport in microfluidic, electronic, and energy systems, yet most optical thermometry techniques are limited to specific metal-liquid interfaces. In this work,…
We have developed a transient thermoreflectance technique using picosecond pulsed and cw laser to study thermal conductivity and interface conductance in both thin-films and bulk materials. A real time-resolved system observes a thermal…
We propose to increase the superconducting transition temperature Tc of strongly correlated materials by designing heterostructures which exhibit a high pairing energy as a result of magnetic fluctuations. More precisely, applying an…
We present thermal conductivity measurements performed in three short-period (GaAs)_9(AlAs)_5 superlattices. The samples were grown at different temperatures, leading to different small scale roughness and broadening of the interfaces. The…
The remarkable finding of this work is the linear correlation between the critical temperature of superconducting (SC) transition, Tc, and the room-temperature half-width of angular correlation of positron annihila- tion phonons (ACPAP),…
Understanding the ideal limit of interfacial thermal conductance (ITC) across semiconductor heterointerfaces is crucial for optimizing heat dissipation in practical applications. By employing a highly accurate and efficient machine-learned…
We proposed a new way, adding intertube atoms, to enhance interfacial thermal conductance (ITC) between SiC-carbon nanotube (CNT) array structure. Non-equilibrium molecular dynamics method was used to study the ITC. The results show that…
We consider the low-temperature thermal transport properties of the 2D proximity-induced superconducting state formed at the interface between a 3D strong topological insulator (TI) and a d-wave superconductor (dSC). This system is a…
Metal-semiconductor interfaces play a central role in micro and nano-electronic devices as heat dissipation or temperature drop across these interfaces can significantly affect device performance. Prediction of accurate thermal boundary…
Unlike time-reversal topological insulators, surface metallic states with Dirac cone dispersion in the recently discovered topological crystalline insulators (TCIs) are protected by crystal symmetry. To date, TCI behaviors have been…
Silicon carbide (SiC) emerges as a promising ceramic material for high-temperature structural applications, especially within the aerospace sector. The utilization of SiC-based ceramic matrix composites (CMCs) instead of superalloys in…
This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described…
A promising path to realizing higher superconducting transition temperatures $T_c$ is the strategic engineering of artificial heterostructures. For example, quantum materials could, in principle, be coupled with other materials to produce a…
Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This strategy lowers the Ge diffusion coefficient to 5.6-7% of…
Recent advances in our understanding of thermal transport in nanocrystalline systems are responsible for the integration of new technologies into advanced energy systems, including thermoelectric refrigeration systems and renewable energy…
The tunability of topological surface states and controllable opening of the Dirac gap are of great importance to the application of topological materials. In topological crystalline insulators (TCIs), crystal symmetry and topology of…
Titanium silicide is a key contact material in advanced three-dimensional semiconductor device architectures. Here, we examine the formation of ultrathin Ti-silicide on Si(100) using a combination of non-destructive in-situ and ex-situ ion…