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The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$…
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…
A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different…
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…
We present a scalable in-pixel processing architecture that can reduce the data throughput by 10X and consume less than 30 mW per megapixel at the imager frontend. Unlike the state-of-the-art (SOA) analog process-in-pixel (PIP) that…
A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…
The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the…
The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation…
Data center interconnects (DCIs) will have to support throughputs of 400 Gbps or more per wavelength in the near future. To achieve such high data rates, coherent modulation and detection is used, which conventionally requires high-speed…
We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…
The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC…
3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…
The Large Hadron Collider (LHC) at CERN will undergo an upgrade in order to increase its luminosity to $7.5 \times 10^{34}$ cm$^{-2}$s$^{-1}$. The increased luminosity during this High-Luminosity running phase (HL-LHC), starting around…
XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rm{\mu}$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray…