Related papers: Electric-field-modulated topological phase transit…
Using first-principles calculations, we found the topological phase transition induced by electric fields in one-bilayer Bi(111). The bandgap decreased with increasing electric field strength, and it is closed at 2.1 V/{\AA}. For fields…
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
Two-dimensional (2D) van der Waals (vdW) magnets present a promising platform for spintronic applications due to their unique structural and electronic properties. The ability to electrostatically control their interlayer magnetic coupling…
Topological insulators, along with Chern insulators and Quantum Hall insulator phases, are considered as paradigms for symmetry protected topological phases of matter. This article reports the experimental realization of the time-reversal…
For controlling the critical electric fields of the topological phase transition in single bilayer Bi(111), we investigated topological phases in a strained system through first-principles calculations. We found a quadratic band touching…
Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely…
The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials promoted 2D heterostructures as key building-blocks of devices for information technology based on topological concepts. Here, we…
Moir\'e transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of…
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…
The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold…
Spatial control of topology is highly desirable for realizing tunable quantum functionalities in materials. Moir\'e superlattices formed by twisting van der Waals heterostructures provide a natural platform for spatially modulated…
Van der Waals (vdW) heterostructures formed by 2D atomic crystals provide a powerful approach towards designer condensed matter systems. Incommensurate heterobilayers with small twisting and/or lattice mismatch lead to the interesting…
Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite…
Materials combining electrically switchable ferroelectricity and tunable topological states hold significant promise for advancing both foundamental quantum phenomena and innovative device architectures. Here, we employ first-principles…
Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal…
Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible…
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and…
van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…
Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of…