English

Electrical engineering of topological magnetism in two-dimensional heterobilayers

Materials Science 2023-11-03 v1

Abstract

The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials promoted 2D heterostructures as key building-blocks of devices for information technology based on topological concepts. Here, we demonstrate the all-electric switching of the topological nature of individual magnetic objects emerging in 2D vdW heterobillayers. We show from the first principles that an external electric field modifies the vdW gap between CrTe 2_2 and (Rh, Ti)Te2_2 layers and alters the underlying magnetic interactions. This enables switching between ferromagnetic skyrmions and meron pairs in the CrTe2_2/RhTe2_2 heterobilayer while it enhances the stability of frustrated antiferromagnetic merons in the CrTe2_2/TiTe2_2 heterobilayer. We envision that the electrical engineering of distinct topological magnetic solitons in a single device could pave the way for novel energy-efficient mechanisms to store and transmit information with applications in spintronics.

Keywords

Cite

@article{arxiv.2311.01294,
  title  = {Electrical engineering of topological magnetism in two-dimensional heterobilayers},
  author = {Nihad Abuawwad and Manuel dos Santos Dias and Hazem Abusara and Samir Lounis},
  journal= {arXiv preprint arXiv:2311.01294},
  year   = {2023}
}