Related papers: Gate-defined quantum point contacts in a germanium…
Determining plateau widths and energy gaps is the remaining task to fully understand the electron transport that gives the fractional quantum Hall effect at the lowest Landau level (LLL). We report that this determination is given by the…
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots…
An anomalous energy splitting of spin triplet states at zero magnetic field has recently been measured in germanium quantum dots. This zero-field splitting could crucially alter the coupling between tunnel-coupled quantum dots, the basic…
We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor…
We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…
We present a device architecture of hybrid-edge and dual-gated quantum point contact. We demonstrate improved electrostatic control over the separation, position, and coupling of each broken-symmetry compressible strip in graphene. Via…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in…
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…
The integer quantized conductance of one-dimensional electron systems is a well understood effect of quantum confinement. A number of fractionally quantized plateaus are also commonly observed. They are attributed to many-body effects, but…
We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The interaction correction to the conductivity of 2D hole gas in strained GaAs/In$_x$Ga$_{1-x}$As/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and ballistic contribution should be taking…
The transconductance and effective Land\'{e} $g^*$ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin-orbit coupling in buckled silicene reduces the $g^*$ factor…
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
The semiconductor quantum point contact has long been a focal point for studies of one-dimensional electron transport. Their electrical properties are typically studied using ac conductance methods, but recent work has shown that the dc…
Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…
We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus…