Related papers: Gate-defined quantum point contacts in a germanium…
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated…
We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer.…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…
Charge fluctuations of a large quantum dot coupled to a two-dimensional lead via a single-mode good Quantum Point Contact (QPC) and capacitively coupled to a back-gate, are investigated in the presence of a parallel magnetic field. The…
The behaviour of the critical point between quantum Hall plateaux, as the Zeeman energy is varied, is analysed using modular symmetry of the Hall conductivities following from the law of corresponding states. Flow diagrams for the…
A systematic study of the energetics of electrons in an interface in a magnetic field is reported with exact analytical calculations based on a Landau Level (LL) picture, by serious consideration of the finite thickness of the Quantum Well…
The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we…
Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Analytical calculations based on a Landau Level (LL) picture are reported for an interface (with a finite-width Quantum Well (QW)) and for a fully three-dimensional charged quantum electronic system in an external magnetic field. They lead…
Analytical calculations based on a Landau Level (LL) picture are reported for an interface (with a finite-width Quantum Well (QW)) and for a fully three-dimensional charged quantum electronic system in an external magnetic field. They lead…
We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…
Strained Ge ($\epsilon$-Ge) and strained Si ($\epsilon$-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, $\epsilon$-Ge and $\epsilon$-Si are…
We calculate the conductance of a ballistic point contact to a superconducting wire, produced by the s-wave proximity effect in a semiconductor with spin-orbit coupling in a parallel magnetic field. The conductance G as a function of…
We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance…