Related papers: Timing resolution performance of Timepix4 bump-bon…
Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and energy simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by…
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The…
The design of a detector system comprised of four silicon sensors bump-bonded to Timepix4 ASICs is described together with its data acquisition system, operational infrastructure, and dedicated software. The spatial and temporal performance…
The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a…
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout…
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of…
A characterisation of the Timepix4 pixel front-end with a strong focus on timing performance is presented. Externally generated test pulses were used to probe the per-pixel time-to-digital converter (TDC) and measure the time-bin sizes by…
The spatial and temporal performance of a telescope system comprising planar silicon sensors bump-bonded to Timepix4-v2 ASICs are assessed at the CERN SPS using a $180$~GeV/$c$ mixed hadron beam. The pointing resolution at the centre of the…
First measurements are presented from a newly commissioned two-photon absorption (TPA) setup at Nikhef. The characterisation of the various components of the system is discussed. Two planar silicon sensors, one being electron collecting and…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second…
Test beam measurements have been carried out with a 3D sensor on a Timepix3 ASIC and the time measurements are presented. The measurements are compared to those of a thin planar sensor on Timepix3. It is shown that for a perpendicularly…
For the advancement of the understanding of timing systematics in pixelized readout chips and for the benefit of future fast timing detectors to aid 4D tracking technology in the HL-LHC, we have performed detailed studies of the timing…
We present the first characterization results of Timespot1, an ASIC designed in CMOS 28 nm technology, featuring a $32 \times 32$ pixel matrix with a pitch of $55 ~ \mu m$. Timespot1 is the first small-size prototype, conceived to readout…
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…
This work presents the first measurements performed on the Timespot1 ASIC. As the second prototype developed for the TimeSPOT project, the ASIC features a 32x32 channels hybrid-pixel matrix. Targeted to space-time tracking applications in…
In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5…
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
A pico-second timing (PIST) front-end electronic chip has been developed using $55~\mathrm{nm}$ CMOS technology for future electron-positron collider experiments (namely Higgs factories). Extensive tests have been performed to evaluate the…