Related papers: Nanoscale single-electron box with a floating lead…
We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition,…
Quantum sensing techniques have been successful in pushing the sensitivity limits in numerous fields, and hold great promise for scanning probes that study nano-scale devices and novel materials. However, forming a nano-scale qubit that is…
We present an electrophoretic platform based on 3D hollow nanoelectrodes capable of controlling and quantifying the intracellular delivery of single nanoparticles in single selected cells by surface-enhanced Raman spectroscopy (SERS). The…
We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate…
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…
We propose a device which implements a solid-state nanostructured electron entangler. It consists of a single-walled carbon nanotube connected at both end to normal state electrodes and coupled in its middle part to a superconducting…
We demonstrate complete control over dynamics of a single superconducting vortex in a nanostructure which we coin the Single Vortex Box (SVB). Our device allows us to trap the vortex in a field-cooled aluminum nanosquare and expel it on…
A Single Ensemble Empirical Mode Decomposition (SEEMD) is proposed for locating the damage in rolling element bearings. The SEEMD does not require a number of ensembles from the addition or subtraction of noise every time while processing…
The ability to probe and control matter at the picometer scale is essential for advancing quantum and energy technologies. Scanning transmission electron microscopy offers powerful capabilities for materials analysis and modification, but…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…
The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Characterizing these defects is an important step towards…
In this paper I give a detailed account of an ab initio methodology for describing strong electronic correlations in nanoscale devices hosting transition metal atoms with open $d$- or $f$-shells. The method combines Kohn-Sham Density…
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales.…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as…
Focused electron beam induced deposition (FEBID) is a powerful technique for 3D-printing of complex nanodevices. However, for resolutions below 10 nm, it struggles to control size, morphology and composition of the structures, due to a lack…
Insight in the structure of nanoparticle assemblies up to a single particle level is key to understand the collective properties of these assemblies, which critically depend on the individual particle positions and orientations. However,…
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the…