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The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…

Mesoscale and Nanoscale Physics · Physics 2021-05-25 Yuchen Ji , Zheng Liu , Peng Zhang , Lun Li , Shifei Qi , Peng Chen , Yong Zhang , Qi Yao , Zhongkai Liu , Kang L. Wang , Zhenhua Qiao , Xufeng Kou

The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid…

Mesoscale and Nanoscale Physics · Physics 2013-10-04 Hai-Zhou Lu , An Zhao , Shun-Qing Shen

Transitions between the quantum Hall state and the Anderson insulator are studied in a two dimensional tight binding model with a uniform magnetic field and a random potential. By the string (anyon) gauge, the weak magnetic field regime is…

Disordered Systems and Neural Networks · Physics 2009-10-31 Y. Morita , K. Ishibashi , Y. Hatsugai

As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Hongyi Sun , Bowen Xia , Zhongjia Chen , Yingjie Zhang , Pengfei Liu , Qiushi Yao , Hong Tang , Yujun Zhao , Hu Xu , Qihang Liu

The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion…

Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering…

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…

Mesoscale and Nanoscale Physics · Physics 2014-03-04 Li Zhang , Merav Dolev , Qi I. Yang , Robert H. Hammond , Bo Zhou , Alexander Palevski , Yulin Chen , Aharon Kapitulnik

The effect of carrier localization due to electron-electron interaction in anomalous Hall effect is elusive and there are contradictory results in the literature. To address the issue, we report here the detailed transport study including…

Strongly Correlated Electrons · Physics 2024-04-26 Prasanta Chowdhury , Mohamad Numan , Shuvankar Gupta , Souvik Chatterjee , Saurav Giri , Subham Majumdar

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…

Instability of quantum anomalous Hall (QAH) effect has been studied as function of electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect…

Mesoscale and Nanoscale Physics · Physics 2017-08-02 Minoru Kawamura , Ryutaro Yoshimi , Atsushi Tsukazaki , Kei S. Takahashi , Masashi Kawasaki , Yoshinori Tokura

Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects…

Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum…

The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall…

Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…

Materials Science · Physics 2021-05-18 Shinji Isogami , Keisuke Masuda , Yoshio Miura , Rajamanickam Nagalingam , Yuya Sakuraba

Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the…

Mesoscale and Nanoscale Physics · Physics 2020-05-27 Huan-Wen Wang , Bo Fu , Shun-Qing Shen

Combining first-principles calculations and tight-binding Hamiltonians, we study the stack-dependent behaviour of electronic and topological properties of layered antiferromagnet MnBi$_2$Te$_4$. Lateral shift of top septuple-layer greatly…

Materials Science · Physics 2025-03-05 Jiaheng Li , Quansheng Wu , Hongming Weng

We experimentally investigate the tendency of localization in the bulk and the topological surface states in topological insulators Pb(Bi1-xSbx)2Te4 (x=0.793-0.818) through detailed transport measurements. The bulk electronic states in the…

We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…

Disordered Systems and Neural Networks · Physics 2009-11-13 K. A. Muttalib , P. Woelfle

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…

Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these…

Materials Science · Physics 2026-03-13 Yufei Zhao , Saswata Mandal , Chao-Xing Liu , Binghai Yan