Related papers: Harnessing Orbital Hall Effect in Spin-Orbit Torqu…

Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…

The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…

Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT…

High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

In this work, we experimentally investigate spin and orbital torque phenomena using the spin-torque ferromagnetic resonance (ST-FMR) technique in a series of bilayer systems composed of different normal metal (NM) materials. Permalloy (Py)…

We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are…

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…

Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…

State-of-the-art developments in magnetic devices rely on manufacturing faster, more efficient memory elements. A significant development in this direction has been the discovery of orbital torques, which employ the orbital angular momentum…

The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…

Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…

We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…

Orbital angular momentum has recently emerged as an important carrier of angular momentum in solids, offering new pathways for spin orbitronic functionality beyond conventional spin transport. Here, we investigate the orbital Hall effect…

Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical…