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We report the study of magnetotransport properties of regio-regular poly (3-hexyl thiophene) based organic diodes. The devices were fabricated using two different techniques of spin coating and inkjet printing. Positive magnetoresistance…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
During the Long Shutdown 3 (LS3, scheduled 2026-2030), the innermost 3 layers (Inner Barrel, or IB) of the present ALICE ITS2 will be replaced with large-area, flexible, stitched CMOS 65 nm sensors, arranged in 2 half-barrels of 3…
The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here,…
We have studied the anomalous Nernst effect (ANE) in [Fe3O4/Pt]-based heterostructures, by measuring the ANE-induced electric field with a magnetic field applied normal to the sample surface, in the perpendicular magnetized configuration,…
We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show…
The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched,…
Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a…
Laser angle-resolved photoemission spectroscopy (ARPES) is employed to investigate the temperature (T) dependence of the electronic structure in BaFe2As2 across the magneto-structural transition at TN ~ 140 K. A drastic transformation in…
The upgrade to the High Luminosity Large Hadron Collider will pose unprecedented challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives…
The magnitude of the inverse Faraday effect (IFE), a static magnetization due to an ac electric field, can be strongly increased in a mesoscopic sample, sensitive to time-reversal symmetry (TRS) breaking. Random rectification of ac voltages…
Circularly polarized optical excitation of plasmonic nanostructures causes coherent circulating motion of their electrons, which in turn, gives rise to strong optically induced magnetization - a phenomenon known as the inverse Faraday…
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and…
We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out…
Advanced gravitational wave interferometric detectors will operate at their design sensitivity with nearly 1MW of laser power stored in the arm cavities. Such large power may lead to the uncontrolled growth of acoustic modes in the test…
After the successful installation and first operation of the upgraded Inner Tracking System (ITS2), which consists of about $10\,$m$^2$ of monolithic silicon pixel sensors, ALICE is pioneering the usage of bent, wafer-scale pixel sensors…
Organic water-gated thin-film transistors (WG-TFTs) are of great interest in developing low-cost and high-performance biosensors. The device's sensitivity to changes in measurement conditions can impair long-term operation, and care must be…
The concept of an electronically-driven breaking of the rotational symmetry of a crystal, without involving magnetic order, has found experimental support in several systems, from semiconductor heterostructures and ruthenates, to cuprate…
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…