Related papers: Negative Capacitance for Stabilizing Logic State i…
Enhanced conductivity at ferroelectric domain walls in BiFeO$_3$ has been widely observed, yet the microscopic origins of this effect, including electronic contributions from domain-wall defects, are incompletely understood at the atomistic…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
Superconductivity was originally observed in 3D metals caused by an effective attraction between electrons mediated by the electron-phonon interaction. Since then there has been a lot of work on 2D conductors including the possibility of…
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to…
We investigate non-equilibrium transport through interacting superconducting nanojunctions using a Liouville space approach. The formalism allows us to study finite gap effects, and to account for both quasiparticle and Cooper pair…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
A new non-Fermi-liquid state of quasi-one-dimensional conductors is suggested in which electronic system exists in a form of collection of bounded Luttinger liquids stabilized by impurities. This state is shown to be stable towards…
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…
We investigate the effect of curvature on the energy and stability of domain wall configurations in curved cylindrical nanotubes and nanowires. We use micromagnetic simulations to calculate the phase diagram for the transverse wall (TW) and…
We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for…
We discuss the microwave energy losses in superconductors in the critical state. The field-induced variations of the surface resistance are determined, in the framework of the Coffey and Clem model, by taking into account the distribution…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering…
This article studies the zero-error feedback capacity of {\em causal} discrete channels with memory. First, by extending the classical zero-error feedback capacity concept, a new notion of {\em uniform zero-error feedback capacity} $ C_{0f}…
It is demonstrated qualitatively how a unified explanation of the wide variety of different regions in a typical phase diagram of HTSC can be given in terms of the model of negative-U centers superconductivity. Both the existence of four…
A deep understanding of the correlation between electronic and mechanical degrees of freedom is crucial to the development of quantum devices in a nanoelectromechanical system (NEMS). In this work, we first establish a fully quantum…
Two- and three-dimensional electron gases with a uniform neutralizing background are studied at negative compressibility. Parametrized expressions for the dielectric function are used to access this strong-coupling regime, where the…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…