Related papers: Spin current control of magnetism
The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the…
Chirality as internal degree of freedom of a mesoscopic domain wall inside a quasi-one-dimensional fixture can be controlled by spin-polarized current for ferro- as well as anti-ferro-magnetic domain walls. We show that the current density…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM)…
The generation of collinear spin current (CSC), where both the propagation direction and spin-polarized direction aligned perpendicularly to the applied charge current, is crucial for efficiently manipulating systems with perpendicular…
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…
We have measured quantum transport through an individual Fe$_4$ single-molecule magnet embedded in a three-terminal device geometry. The characteristic zero-field splittings of adjacent charge states and their magnetic field evolution are…
Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film…
Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…
An isotropic medium, having magnetic sublevels, when subjected to a magnetic field or an electromagnetic field can induce anisotropy in the medium; and as a result the plane of polarization of the probe field can rotate. Therefore the…
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $\chi_{SHE}$, can be estimated for Pt…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge…
While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger…