Related papers: Spin current control of magnetism
Inefficient screening of electric fields in nanoconductors makes electric manipulation of electronic transport in nanodevices possible. Accordingly, electrostatic (charge) gating is routinely used to affect and control the Coulomb…
Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular,…
We discuss a new class of phenomena based on strong interaction between magnetic superstructures and vortices in superconductors in combined heterogeneous structures. An inhomogeneous magnetization can pin vortices or create them…
Topological chiral antiferromagnets, such as Mn$_{3}$Sn, are emerging as promising materials for next-generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, we demonstrate…
Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall…
Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…
We carry out a systematic theoretical investigation of Magneto Crystalline Anisotropy (MCA) of L10 FePt clusters with alternating Fe and Pt planes along the (001) direction. We calculate the structural relaxation and magnetic moment of each…
The competition between shape and perpendicular magnetic anisotropies (PMA) in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic films with moderate PMA the magnetic domain configuration transitions from planar…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored.…
A scanning tunneling microscope can probe the inelastic spin excitations of a single magnetic atom in a surface via spin-flip assisted tunneling in which transport electrons exchange spin and energy with the atomic spin. If the inelastic…
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied…
Integrating topologically stabilized magnetic textures such as skyrmions as nanoscale information carriers into future technologies requires the reliable control by electric currents. Here, we uncover that the relevant skyrmion Hall effect,…
Spin current--a flow of electron spins without a charge current--is an ideal information carrier free from Joule heating for electronic devices. The celebrated spin Hall effect, which arises from the relativistic spin-orbit coupling,…