Related papers: Room Temperature Spin Filtering and Quantum Transp…
The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spin-filter materials --- semiconductors with unequal band gaps for each spin channel --- can generate spin-polarized…
The intrinsic flux noise observed in superconducting quantum interference devices (SQUIDs) is thought to be due to the fluctuation of electron spin impurities, but the frequency and temperature dependence observed in experiments do not…
We propose a general protocol for low-control refrigeration and thermometry of thermal qubits, which can be implemented using electronic spins in diamond. The refrigeration is implemented by a probe, consisting of a network of interacting…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
Quantum impurity (QI) spins offer promising information processing and sensing applications by harnessing up to room-temperature quantum coherence. Challenged by the requirement of designing local coherent drives and improving sensitivity…
New advances in single-atom manipulation are leading to the creation of atomic structures on H passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and…
Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled…
Spin fluctuation and transition have always been one of central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron scattering process, which…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a…
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…
A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and…
When gold is deposited on Si(553), the surface self-assembles to form a periodic array of steps with nearly perfect structural order. In scanning tunneling microscopy these steps resemble quasi-one-dimensional atomic chains. At temperatures…
We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed…
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
Strong correlation effects in a capacitively coupled double quantum-dot setup were previously shown to provide the possibility of both entangling spin-charge degrees of freedom and realizing efficient spin-filtering operations by static…
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization…
Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel…
Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made…