Related papers: Simulation study of short channel effects in junct…
The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…
We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…
In the tunneling regime and at sufficiently low field amplitudes, the shape of orientation-dependent molecular ionization rate curves usually resembles the shape of the ionized orbital. As the ionizing field strength increases, the shape of…
In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin…
Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on…
The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the…
Systematic benchmark calculations for elemental bulks are presented to validate the accuracy of density functional theory for superconductors. We developed a method to treat the spin-orbit interaction (SOI) together with the spin…
The Josephson Effect and Superconducting Proximity Effect were observed in Superconductor -Graphene-Superconductor (SGS) Josephson junctions with coherence lengths comparable to the distance between the superconducting leads. By comparing…
Resonant proximity effect in the normal metal / insulator / diffusive ferromagnet / insulator / $s$- and d-wave superconductor (N/I/DF/I/S) junctions is studied for various regimes by solving the Usadel equation with the generalized…
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…
The impact of electrostatic doping level on the dissipative transport of Armchair GNR-TFET is studied using the Quantum Perturbation Theory (QPT) with the Extended Lowest Order Expansion (XLOE) implementation method. Results show that the…
The channeling effect of low energy ions along the crystallographic axes and planes of NaI(Tl) crystals is discussed in the framework of corollary investigations on WIMP Dark Matter candidates. In fact, the modeling of this existing effect…
We study the effect of long range dipolar forces on the dynamics and morphology of domain walls in magnetic thin films by numerical simulations of the spin-1 random field Ising model. By studying the size distribution of avalanches of…
We examine the changes in kinetic energy dissipation of a turbulent channel flow caused by a spanwise magnetic field. The numerical study is based on our simulation data from [Krasnov, Zikanov, Schumacher, Boeck, Phys. Fluids 20, 095105…
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…
The longitudinal current in a three-dimensional conductor is accompanied by transverse magnetic field in a specimen bulk. The absence of the transverse current in a sample bulk requires a nonzero Hall electric field in transverse…
In this work we present a study on the impact of various intrinsic deformations like ripples, twist, wrap on the electronic properties of ultra-short monolayer MoS2 channels. The effect of deformation (3-7o twist or wrap and 0.3-0.7…
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented.…