A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 oC was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 oC rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.
@article{arxiv.1002.4934,
title = {Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport},
author = {B. C. Johnson and J. C. McCallum and L. H. Willems van Beveren and E. Gauja},
journal= {arXiv preprint arXiv:1002.4934},
year = {2010}
}