Related papers: HOPE: Holistic STT-RAM Architecture Exploration Fr…

Ultra-fast \& low-power superconductor single-flux-quantum (SFQ)-based CNN systolic accelerators are built to enhance the CNN inference throughput. However, shift-register (SHIFT)-based scratchpad memory (SPM) arrays prevent a SFQ CNN…

Hierarchical temporal memory (HTM) is a biomimetic sequence memory algorithm that holds promise for invariant representations of spatial and spatiotemporal inputs. This paper presents a comprehensive neuromemristive crossbar architecture…

Magnetic Random-Access Memory (MRAM) based p-bit neuromorphic computing devices are garnering increasing interest as a means to compactly and efficiently realize machine learning operations in Restricted Boltzmann Machines (RBMs). When…

Hierarchical Temporal Memory (HTM) is a biomimetic machine learning algorithm imbibing the structural and algorithmic properties of the neocortex. Two main functional components of HTM that enable spatio-temporal processing are the spatial…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

This paper gives an overview of a new technique, named pseudo-ring testing (PRT). PRT can be applied for testing wide type of random access memories (RAM): bit- or word-oriented and single- or dual-port RAM's. An essential particularity of…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

This research explores the use of superconductor electronics (SCE) for accelerating fully homomorphic encryption (FHE), focusing on the Number-Theoretic Transform (NTT), a key computational bottleneck in FHE schemes. We present SCE-NTT, a…

Emerging Persistent Memory technologies (also PM, Non-Volatile DIMMs, Storage Class Memory or SCM) hold tremendous promise for accelerating popular data-management applications like in-memory databases. However, programmers now need to deal…

Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…

Non-volatile memory (NVM) is a promising technology for low-energy and high-capacity main memory of computers. The characteristics of NVM devices, however, tend to be fundamentally different from those of DRAM (i.e., the memory device…

Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method…

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…

As deep neural network (DNN) models are growing exponentially in size, their deployment on resource-constrained edge platforms is becoming increasingly challenging. In-memory-computing (IMC) with non-volatile memories (NVMs) has emerged as…

Non-volatile memory (NVM), aka persistent memory, is a new paradigm for memory that preserves its contents even after power loss. The expected ubiquity of NVM has stimulated interest in the design of novel concepts ensuring correctness of…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…

Spiking Neural Networks (SNNs), models inspired by neural mechanisms in the brain, allow for energy-efficient implementation on neuromorphic hardware. However, SNNs trained with current direct training approaches are constrained to a…