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We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers.…

Nanomagnetic oscillator is a key component for radio-frequency (RF) signal generation in many nano-scale spintronic devices. However, the actuation mechanisms of nanomagnetic oscillators are mostly current-based, which is energy inefficient…

Applied Physics · Physics 2018-12-07 Qianchang Wang , Yiheng Li , Andres Chaves , Joseph Schneider , Jin-Zhao Hu , Greg Carman

A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods,…

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…

Mesoscale and Nanoscale Physics · Physics 2025-10-28 Tongxin Chen , Yinyu Nie , Yafei Hao , Shengchun Shen , Jiajun Pan , Xiaoguang Li , Yuan Lu

A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of…

Materials Science · Physics 2017-05-24 Iriya Muneta , Toshiki Kanaki , Shinobu Ohya , Masaaki Tanaka

Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…

Mesoscale and Nanoscale Physics · Physics 2025-08-27 Md Mahadi Rajib , Namita Bindal , Ravish Kumar Raj , Brajesh Kumar Kaushik , Jayasimha Atulasimha

Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…

Systems and Control · Electrical Eng. & Systems 2022-09-20 Karam Cho , Sumeet Kumar Gupta

Spintronic-based brain-inspired neuromorphic computing has recently attracted significant attention due to the exceptional properties of magnetic microstructures, including nanoscale dimensions, high stability, and low energy consumption.…

Computational Physics · Physics 2025-12-05 Anmol Sharma , Ranjeet Kumar Brajpuriya , Vivek K. Malik , Vishakha Kaushik , Sachin Pathak

Emerging resistive-crossbar memory (RCM) technology can be promising for computationally-expensive analog pattern-matching tasks. However, the use of CMOS analog-circuits with RCM would result in large power-consumption and poor…

Materials Science · Physics 2013-08-26 Mrigank Sharad , Deliang Fan , Kaushik Roy

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…

Mesoscale and Nanoscale Physics · Physics 2014-07-22 Maciej Misiorny , Józef Barnaś

Single-qubit gates are essential components of a universal quantum computer. Without selective addressing of individual qubits, scalable implementation of quantum algorithms is not possible. When the qubits are discrete points or regions on…

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…

Materials Science · Physics 2009-11-13 M. Overby , A. Chernyshov , L. P. Rokhinson , X. Liu , J. K. Furdyna

Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study…

Presented below is an interesting type of associative memory called toggle memory based on the concept of T flip flops, as opposed to D flip flops. Toggle memory supports both reversible programming and charge recovery. Circuits designed…

Hardware Architecture · Computer Science 2007-05-23 John Robert Burger

The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…

Applied Physics · Physics 2025-03-17 Qiming Shao , Zhongrui Wang , Yan Zhou , Shunsuke Fukami , Damien Querlioz , Leon O. Chua

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…

Emerging Technologies · Computer Science 2017-01-04 Jianxin Shen , Dashan Shang , Yisheng Chai , Yue Wang , Junzhuang Cong , Shipeng Shen , Liqin Yan , Wenhong Wang , Young Sun

The role of the feedback effect on physical reservoir computing is studied theoretically by solving the vortex-core dynamics in a nanostructured ferromagnet. Although the spin-transfer torque due to the feedback current makes the vortex…

Mesoscale and Nanoscale Physics · Physics 2020-06-25 Terufumi Yamaguchi , Nozomi Akashi , Sumito Tsunegi , Hitoshi Kubota , Kohei Nakajima , Tomohiro Taniguchi

We investigate anisotropy in Fourier-domain speckle correlations associated with the optical memory effect in disordered scattering media. Within a single scattering framework, we show that while the conventional memory effect constrains…

Optics · Physics 2026-05-06 Niall Byrnes , Matthew R. Foreman

We study spin transport in nonitinerant one-dimensional quantum spin chains. Motivated by possible applications in spintronics, we consider rectification effects in both ferromagnetic and antiferromagnetic systems. We find that the crucial…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 Kevin A. van Hoogdalem , Daniel Loss

We propose a non-volatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads…

Superconductivity · Physics 2025-01-30 C. Guarcello , F. S. Bergeret
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