Related papers: RESURF Ga$_{2}$O$_{3}$-on-SiC Field Effect Transis…
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…
All-dielectric nanostructures have recently emerged as a promising alternative to plasmonic devices, as they also possess pronounced electric and magnetic resonances and allow effective light manipulation. In this work, we study optical…
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…
We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels…
This work continues the development of the raytracing method of [1] for computing the scattered fields from metasurfaces characterized by locally periodic reflection and transmission coefficients. In this work, instead of describing the…
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…
Field-plated (FP) depletion-mode MOVPE-grown $\beta$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents…
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated…
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron dimensions. We used a nanolaminate dielectric comprising a…
We present an investigation into the role of anode grid pitch and excitation spectrum on the performance of high-power optoelectronic switches utilizing Fe-doped $\beta$-Ga$_2$O$3$. By systematically varying the anode grid pitch ($20-80\…
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…