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Related papers: Tunable 2D Electron- and 2D Hole States Observed a…

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Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning…

Quantum spin Hall edge transport in two-dimensional transition-metal dichalcogenides depends on whether their one-dimensional edge channels are preserved under realistic substrates and device boundaries. Here we implement spin-orbit…

Mesoscale and Nanoscale Physics · Physics 2025-08-19 Wei Li , Pier Philipsen , Thomas Brumme , Thomas Heine

New Fe-pnictide heterostructures of the type LnOFeAs/BaFe$_2$As$_2$ (Ln = La, Sm) were grown by pulsed laser deposition (PLD) and investigated. Their common structural unit of [Fe$_2$As$_2$] planes allows perfect matching between the…

Superconductivity · Physics 2021-11-01 Silvia Haindl , Sergey Nikolaev , Michiko Sato , Masato Sasase , Ian MacLaren

Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic…

Materials Science · Physics 2019-06-19 Abhishek Sharan , Zhigang Gui , Anderson Janotti

At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the…

Superconductivity · Physics 2016-07-13 D. Di Castro , C. Cantoni , F. Ridolfi , C. Aruta , A. Tebano , N. Yang , G. Balestrino

The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic…

Materials Science · Physics 2016-03-02 M. Nazarzahdemoafi , F. Titze , S. Machulik , C. Janowitz , Z. Galazka , R. Manzke , M. Mulazzi

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…

Using the bosonization technique, which separates charge and spin degrees of freedom, we study a possibility of formation of the holon edge states in a one-dimensional electron system with an energy gap in the charge sector. The results are…

Strongly Correlated Electrons · Physics 2007-05-23 Andrei V. Lopatin , Victor M. Yakovenko

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 {\deg}C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is…

Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential…

Materials Science · Physics 2022-10-24 H. Yan , S. W. Zeng , K. Rubi , G. J. Omar , Z. T. Zhang , M. Goiran , W. Escoffier , A. Ariando

The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition…

Finding new collective electronic states in materials is one of the fundamental goals of condensed matter physics. Atomic-scale superlattices formed from transition metal oxides are a particularly appealing hunting ground for new physics.…

Strongly Correlated Electrons · Physics 2014-10-16 Jak Chakhalian , John W. Freeland , Andrew J. Millis , Christos Panagopoulos , James M. Rondinelli

The rich phase diagram of the two dimensional electron gas (2DEG) at the \STO/\LAO interface is probed using Hall and longitudinal resistivity. Thanks to a special bridge design we are able to tune through the superconducting transition…

Superconductivity · Physics 2014-02-20 M. Ben Shalom , I. Neder , A. Palevski , Y. Dagan

Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…

We investigate the electronic, ferroelectric and magnetic properties of KTaO3/PbTiO3 interfaces by using conventional density functional theory (DFT) and advanced DFT such as hybrid functional HSE06. We show that doped holes in valence…

Materials Science · Physics 2014-07-04 Yi Yang , Chen-Sheng Lin , Jin-Feng Chen , Lei Hu , Wen-Dan Cheng

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the…

Materials Science · Physics 2017-07-21 Ying Jia , Teodor K. Stanev , Erik J. Lenferink , Nathaniel P. Stern

Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory…

Strongly Correlated Electrons · Physics 2017-10-13 A. Ron , A. Hevroni , E. Maniv , M. Mograbi , L. Jin , C. -L. Jia , K. W. Urban , G. Markovich , Y. Dagan

Cuprate high temperature superconductors consist of two quasi-two-dimensional (2D) substructures: CuO2 superconducting layers and charge reservoir layers. The superconductivity is realized by charge transfer from the charge reservoir layers…

Superconductivity · Physics 2016-10-13 Lili Wang , Xucun Ma , Qi-Kun Xue

Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) are known to lead to divergent DOS in…

Strongly Correlated Electrons · Physics 2023-02-20 Donghan Kim , Younsik Kim , Byungmin Sohn , Minsoo Kim , Bongju Kim , Tae Won Noh , Changyoung Kim

The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Cheng Wang , Heidi Seinige , Gang Cao , Jian-Shi Zhou , John B. Goodenough , Maxim Tsoi
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