Related papers: Local laser-induced solid-phase recrystallization …
Nanotubed titanic acid (H2Ti2O4(OH)2) was prepared from nanotubed sodium titanate (Na2Ti2O4(OH)2) by an ion exchange reaction in a pH=1 HCl solution. The effect of annealing temperature on the morphology, structure and photocatalytic…
Laser-induced modification of transparent solids by intense femtosecond laser pulses allows fast integration of nanophotonic and nanofluidic devices with controlled optical properties. So far, the local and dynamic nature of the…
In this work we used $\textit{ab-initio}$ random structure searching (AIRSS) to carry out a systematic search for crystalline Na-Ge materials at both 0 and 10 GPa. The high-throughput structural relaxations were accelerated using a…
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have…
Ge/SiGe heterostructures represent a promising platform for hosting various quantum devices such as hole spin qubits and Andreev spin qubits. However, the compatibility of such heterostructures with high-quality-factor microwave…
We show that, at high densities, fully variational solutions of solid-like type can be obtained from a density functional formalism originally designed for liquid 4He. Motivated by this finding, we propose an extension of the method that…
In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack…
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. The results cannot be understood within the framework of standard theories for quantum corrections of a weakly…
Equiatomic TaNbHfZr and TaNbHfZrTi high-entropy alloys (HEAs) have been investigated for their phase stability, short-range clustering (SRC) type chemical ordering, other structural phenomena and and the effects on strengthening. Ab-initio…
Recent experiments showed that the shear modulus of solid 4He stiffens in the same temperature range (below 200 mK) where mass decoupling and supersolidity have been inferred from torsional oscillator measurements. The two phenomena are…
Phase transition and current of planar clusters with loops of Josephson $\pi$ junction is of great importance for application in the adiabatic quantum computation devices (AQC). Each $\pi$-ring possesses an orbital moment with a current.…
The structural and compositional stabilities of two dimensional 2D Bi2Te3 and Bi2Se3 nanocrystals, produced by both colloidal synthesis and by liquid phase exfoliation, were studied by in situ transmission electron microscopy TEM during…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…
The difficult intercalation of sodium (Na) into graphite is studied by systematic and long-time investigations (of up to 2 years) using highly oriented pyrolytic graphite (HOPG). By studying chemical insertion of solid, liquid and gaseous…
In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for…
Nano-scale eutectics, such as rapid solidified Al-Si, exhibit enhanced yield strength and strain hardening but plasticity is limited by cracking of the hard phase (Si). Mechanisms that may suppress cracking and enable plastic co-deformation…
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due…
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge…
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…