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This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of…
We fabricate van der Waals heterostructure devices using few unit cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ for magnetotransport measurements. The superconducting transition temperature and carrier density in atomically thin samples can…
Thin films of the high-temperature superconductor HgBa$_2$CaCu$_2$O$_{6+\delta}$ have been prepared on SrTiO$_3$ substrates by pulsed-laser deposition of precursor films and subsequent annealing in mercury-vapor atmosphere. The…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…
The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $\beta$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the…
Measurements of basal plane longitudinal rho_b(B) and Hall rho_H(B) resistivities were performed on highly oriented pyrolytic graphite (HOPG) samples in pulsed magnetic field up to B = 50 T applied perpendicular to graphene planes, and…
We review recently developed two-step approach for description of electronic and magnetic properties of a new class of materials, the diluted magnetic semiconductors. In the first step we construct, on the basis of the state-of-the-art…
Twisted van der Waals materials provide a tunable platform for investigating two-dimensional superconductivity and quantum phases. Using spectra-imaging scanning tunneling microscopy, we study the superconducting states in twisted bilayer…
Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the…
Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall…
The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the {\it b} axis. The resistivity at zero field exhibits quadratic temperature dependence…
Measurements of the Hall coefficient in La$_{2-x}$Sr$_x$CuO$_4$, ranging from the undoped ($x = p = 0$) Mott insulator to overdoped compounds, exhibit a temperature dependence that offers insights into their electronic structure. We…
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three…
We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor…
The behaviour of the Hall ratio $R_{H}(T)$ as a function of temperature is one of the most intriguing normal state properties of cuprate superconductors. One feature of all the data is a maximum of $R_{H}(T)$ in the normal state that…