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Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with…
The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo formalism. Both normal (NHE) and anomalous contributions (AHE)…
RuSr$_2$GdCu$_2$O$_8$, in which magnetic order and superconductivity coexist with $T_{Magnetic}$$\gg$$T_c$, is a complex material which poses new and important questions to our understanding of the interplay between magnetic and…
A novel time-domain technique for supercapacitor characterization is developed, modeled numerically, and experimentally tested on a number of commercial supercapacitors. The method involves momentarily shorting a supercapacitor for a brief…
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW…
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from…
High-quality polycrystalline SmFeAsO0.75 was synthesized with a superconducting transition width less than 1 K, and the electronic behavior was systematically studied by transport and specific heat measurements. An obvious superconducting…
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with two-dimensional topological semimetals are pivotal for advancing next-generation spintronic and…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
The in-plane resistivity and Hall coefficient have been measured for the single-layer compound Bi$_2$Sr$_2$CuO$_{6+\delta}$ for the whole range of doping states. The deviation of the Hall coefficient, $R_H$, from a high-temperature linear…
The Hall coefficient (R_H) of high-Tc cuprates in the normal state shows the striking non-Fermi liquid behavior: R_H follows a Curie-Weiss type temperature dependence, and |R_H|>>1/|ne| at low temperatures in the under-doped compounds.…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
Understanding the superconducting properties of MgB_2 is based strongly on knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB_2 using the de…
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and…
We present the magnetic field dependencies of transport properties for $R$PtBi ($R$ = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature and field dependent resistivity measurements of high quality $R$PtBi single crystals reveal an…
A growing number of two-dimensional superconductors are being discovered in the family of layered van der Waals (vdW) materials. Due to small sample volume, their characterization has been largely limited to electrical transport…
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
We investigate a gapped two-dimensional nodal-line semimetal subjected to a perpendicular magnetic field. We identify an unusual pattern for Landau levels, where the energy of Landau levels first decreases and then starts increasing versus…
Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping…