The in-plane resistivity and Hall coefficient have been measured for the single-layer compound Bi2Sr2CuO6+δ for the whole range of doping states. The deviation of the Hall coefficient, RH, from a high-temperature linear behavior and the temperature dependence of the Hall angle are both only weakly dependent upon doping, contrasting with Bi2Sr2−xLaxCuO6+δ and Bi2Sr2CaCuO8+δ. This is in contradiction with former proposals that the transverse transport detects the formation of incoherent Cooper pairs in the pseudogap state. Conversely, the analysis of the data using a phenomenological angular dependent scattering rate clearly allows to distinguish between underdoped and overdoped states, and we propose that the maximum in RH(T) simply arises due to the combination of a large isotropic scattering rate and an anisotropic temperature dependent one.
@article{arxiv.cond-mat/0611184,
title = {Influence of Disorder on the Hall Effect in Bi$_2$Sr$_2$CuO$_{6+\delta}$},
author = {L. Fruchter and H. Raffy and F. Bouquet and Z. Z. Li},
journal= {arXiv preprint arXiv:cond-mat/0611184},
year = {2009}
}