English

Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite

Mesoscale and Nanoscale Physics 2015-03-17 v1

Abstract

Transport measurements indicate strong oscillations in the Hall-,RxyR_{xy}, and the diagonal-, RxxR_{xx}, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting Hg0.8Cd0.2TeHg_{0.8}Cd_{0.2}Te, and some other systems. Finally, we observe the transport data to follow B×dRxy/dBΔRxxB\times dR_{xy}/dB \approx - \Delta R_{xx}. This feature is consistent with the observed relative phases of the oscillatory RxxR_{xx} and RxyR_{xy}.

Keywords

Cite

@article{arxiv.1010.0603,
  title  = {Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite},
  author = {Aruna N. Ramanayaka and R. G. Mani},
  journal= {arXiv preprint arXiv:1010.0603},
  year   = {2015}
}

Comments

5 pages, 4 figures