Related papers: Microstructure evolution of carbon films with incr…
We report on the low-temperature fabrication (300$\deg$C) of ultrathin 2D amorphous carbon layers on III-V semiconductors by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and…
We report a joint study, using Raman micro-spectroscopy and molecular dynamics simulations, on the substrate effect on thermal properties of 2D materials and revisit measurement of thermal expansion coefficient (TEC) of supported 2D film.…
Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared…
We report on the correlation between the boson-peak and structural changes associated with thermally-treating amorphous indium-oxide films. In this process, the resistance of a given sample may decrease by a considerable margin while its…
Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…
We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different…
In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…
A novel form of amorphous carbon with sp-sp2 hybridization has been recently produced by supersonic cluster beam deposition showing the presence in the film of both polyynic and cumulenic species [L. Ravagnan et al. Phys. Rev. Lett. 98,…
$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…
5$\mu$m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (Tdep <= 600 degrees C) on the structural, magnetic and mechanical properties has shown that optimum…
The amorphous conducting carbon films have been prepared at three different preparation temperatures with different boron-doping levels. The structural and transport properties of the same have been studied. X-ray diffraction measurements…
The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature dependent X-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure…
AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition…
We propose an experimental approach, by which thin films of copper polyphthalocyanine (CuPPC) can be directly synthesized in a chemical vapor deposition (CVD) set-up at mild temperature (420 {\deg}C). High polymerization degree and high…
This paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001) Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the…
Patterned films of decorated nitrogenated carbon (C-N) nanotubes were catalytically synthesised by hot filament chemical vapour deposition (HF-CVD) in a nitrogen-methane-ammonia environment. The systematic study of a transition between…
The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM)…
Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…
Ca- and Zn-subsituted Y1-xCaxBa2(Cu1-yZny)O7-delta (x = 0, 0.05 and y = 0, 0.02, 0.04, 0.05) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition (PLD) technique. Effects of various growth parameters on the…
We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) in Ar main gas flow. The…