Related papers: Nonvolatile spin field effect transistor based on …
Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has…
The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals…
Efficient magnetic switching is a cornerstone for advancing spintronics, particularly for energy-efficient data storage and memory devices. Here, we report the electrical switching of spin-flips in V-doped WSe2 multilayers, a van der Waals…
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique…
First principle FLAPW-GGA calculations have been performed with the purpose to understand the peculiarities of band structure and Fermi surface topology for recently discovered superconductor: Sr4V2Fe2As2O - in comparison with isostructural…
We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19…
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a…
Momentum-resolved spin-polarized bands are a key ingredient in many proposed spintronic devices, but their existence often relies on lattice commensurability or strong spin-orbit coupling. By a large-scale DFT calculation (up to 4212…
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
Two-dimensional altermagnets exhibit exceptional potential for low-power spintronics via nonrelativistic spin splitting and zero net magnetization. Here, we systematically investigate the influence of interlayer interactions on the…
The challenging task of scaling-down the size of the power saving electronic devices can be accomplished by exploiting the spin degree of freedom of the conduction electrons in van der Waals (vdW) spintronic architectures built with 2D…
We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field…
We propose ferroelectric layer sliding as a new approach to realize and manipulate topological quantum states in two-dimensional (2D) bilayer magnetic van der Waals materials. We show that stacking monolayer ferromagnetic topological states…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
The interplay between spin reorientation and topological electronic structure in two-dimensional (2D) van der Waals (vdW) ferromagnets is central to understanding how magnetic anisotropy shapes charge transport. Although spin-reorientation…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…