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Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more.…
Spiking neural networks (SNNs) are being explored in an attempt to mimic brain's capability to learn and recognize at low power. Crossbar architecture with highly scalable Resistive RAM or RRAM array serving as synaptic weights and neuronal…
This submission is a report on RRAM based neuromorphic algorithms. This report basically gives an overview of the algorithms implemented on neuromorphic hardware with crossbar array of RRAM synapses. This report mainly talks about the work…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
Self-attention in Transformers generates dynamic operands that force conventional Compute-in-Memory (CIM) accelerators into costly non-volatile memory (NVM) reprogramming cycles, degrading throughput and stressing device endurance. Existing…
Convolutional neural networks (CNNs) demonstrate promising accuracy in a wide range of applications. Among all layers in CNNs, convolution layers are the most computation-intensive and consume the most energy. As the maturity of device and…
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…
Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
The recent rise of Large Language Models (LLMs) has revolutionized the deep learning field. However, the desire to deploy LLMs on edge devices introduces energy efficiency and latency challenges. Recurrent LLM (R-LLM) architectures have…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
Recent advances in memory technologies, devices and materials have shown great potential for integration into neuromorphic electronic systems. However, a significant gap remains between the development of these materials and the realization…
This paper presents a novel framework for designing support vector machines (SVMs), which does not impose restriction on the SVM kernel to be positive-definite and allows the user to define memory constraint in terms of fixed template…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been…
Here it is proposed a three-dimensional plasmonic nonvolatile memory crossbar arrays that can ensure a dual-mode operation in electrical and optical domains. This can be realized through plasmonics that serves as a bridge between photonics…
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…