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One of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristics of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc.,…
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and…
Close-packed chalcogenide spinels, such as MgSc$_2$Se$_4$, MgIn$_2$S$_4$ and MgSc$_2$S$_4$, show potential as solid electrolytes in Mg batteries, but are affected by non-negligible electronic conductivity, which contributes to…
In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…
Electronic quantum effects in disordered conductors are controlled by the dephasing rate of conduction electrons. This rate is expected to vanish with the temperature. We consider the very intriguing recently reported apparent saturation of…
The influence of atomic vacancy defects at different concentrations on electronic properties of MoS$_2$ and WS$_2$ monolayers is studied by means of Slater-Koster tight-binding model with non-orthogonal $sp^3d^5$ orbitals and including the…
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic…
Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of…
An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two…
Using the negative U Hubbard model we analyze normal state properties of a superconductor. In this model there exists a characteristic pairing temperature T_P above a superconducting critical temperature. Below T_P electrons start to form…
The peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means…
Using first-principles calculations, we show that Fe2VAl is an indirect band gap semiconductor. Our calculations reveal that its, sometimes assigned, semimetallic character is not an intrinsic property but originates from the antisite…
We consider the experimental properties of superconductors with a gap which is an odd function of energy $\bepsk=\epsk - \mu$, i.e.\ , a gap which vanishes everywhere on the Fermi surface; this is done within a in a BCS framework. Apart…
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of…
Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our…
Several Fe chalcogenide superconductors without hole pockets at the Fermi level display high temperature superconductivity, in apparent contradiction to naive spin fluctuation pairing arguments. Recently, scanning tunneling microscopy…
Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form…
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented,…
We consider a two dimensional semiconductor with a local attraction among the carriers. We study the ground state of this system as a function of the semiconductor gap. We find a direct transition from a superconducting to an insulating…
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide…