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Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary and relatively abundant intrinsic defect, no optical signal…
Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide…
We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two…
The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O$_2^{2-}$ peroxide defects. The valence band tail states are at least partly characterized by the O-O…
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to…
In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally…
Spatial fluctuations of the effective pairing interaction between electrons in a superconductor induce variations of the order parameter which in turn lead to significant changes in the density of states. In addition to an overall reduction…
Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {\gamma}…
Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they…
It is shown that a photoelectron, on being emitted from a conducting solid, suffers a substantial energy change due to ohmic losses. Almost all of this energy loss takes place after the electron leaves the solid. These losses may be…
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the…
Defects play important roles in semiconductors for optoelectronic applications. Common intuition is that defects with shallow levels act as carrier providers and defects with deep levels are carrier killers. Here, taking the Cu defects in…
The aim of this paper is to present the analysis of influence of defects in 1D photonic crystal (PC) on the density of states and simultaneously spontaneous emission, in both spatial and frequency domains. In our investigations we use an…
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic…
We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
We show that finite size superconductors have a spectrum of states at extremely low energy, i.e. inside the superconducting gap. The presence of this {\it thin spectrum} is a generic feature and related to the fact that in a superconductor…
The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the…
According to the Goldstone theorem the breaking of a continuous U(1) symmetry comes along with the existence of low-energy collective modes. In the context of superconductivity these excitations are related to the phase of the…
The changes of defect characteristics induced by accelerated lifetime tests on the heterostructure n-ZnO/i-ZnO/CdS/Cu(In, Ga)(S, Se)$_2$/Mo relevant for photovoltaic energy conversion are investigated. We subject heterojunction and Schottky…