Related papers: High temperature ferrimagnetic semiconductors by s…

Iron-substitution in hexagonal YMnO3 causes isostructural intra-lattice changes exceeding those of the lattice cell, contrary to the effects of non-magnetic B-site dopants. Magnetization M(T) evidence antiferromagnetic (AFM) ordering of the…

Magnetic insulators are often antiferromagnetic (AFM) and layered AFM compounds usually show low ordering temperature. On the other hand, layered ferromagnetic (FM) insulators with high-TC are very rare although they could be quite useful…

We report experimental results of ^{75}As and ^{139}La nuclear magnetic resonance (NMR) in the iron-based layered La(O_{1-x}F_{x})FeAs (x= 0.0, 0.04 and 0.11) system. In the undoped LaOFeAs, 1/T_1 of ^{139}La exhibits a distinct peak at T_N…

The evolution of low-energy spin dynamics in the iron-based superconductor LaFeAsO$_{1-x}$F$_x$ was studied over a broad doping, temperature, and magnetic field range (x = 0 - 0.15, T up to 480K, H up to 30T) by means of As nuclear magnetic…

We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the…

Intercalated Fe chalcogenide K$_2$Fe$_4$Se$_5$ family exhibits high Tc ($\sim$ 30 K) superconductivity and spin-8 high T$_{\rm N}$ ($\sim$ 560 K) antiferromagnetism (AFM). We present a model Hamiltonian and suggest \textit{Skyrmion…

Strong spin-lattice coupling and prominent frustration effects observed in the 50$\%$ Fe-doped frustrated hexagonal ($h$)LuMnO$_3$ are reported. A N\'{e}el transition at $T_{\mathrm N} \approx$ 112~K and a possible spin re-orientation…

Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room-temperature multiferroics and understanding their fundamental properties are important to reveal…

ESR-study of the Ni-doped spin-Peierls compound CuGeO3 has been performed in the frequency range 9-75 GHz. At low temperatures the g-factor is smaller than the value expected for Cu- and Ni-ions. This anomaly is explained by the formation…

Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely…

Recent demonstrations on manipulating antiferromagnetic (AF) order have triggered a growing interest in antiferromagnetic metal (AFM), and potential high-density spintronic applications demand further improvements in the anisotropic…

Ac current-driven motions of spiral spin textures can give rise to emergent electric fields acting on conduction electrons. This in turn leads to the emergent electromagnetic induction effect which may realize quantum inductor elements of…

Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…

Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely…

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn…

The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…

Bismuth selenide is both a thermoelectric material and topological insulator. Defects and dopants create conduction in thermoelectric applications. However, such defects may degrade the performance as a topological insulator (TI). Magnetic…

A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and…

We study the temperature-dependent quantum correction to conductivity due to the interplay of spin density fluctuations and weak disorder for a two-dimensional metal near an antiferromagnetic (AFM) quantum critical point. AFM spin density…

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating…